Device Types

 QuantaFab supports MEMS fabrication from structural layer deposition through deep silicon etching and device release. The Plasma-Therm Versaline DSE provides Bosch-process deep reactive ion etching for high-aspect-ratio silicon trenches and through-silicon vias. Xactix XeF2 vapor-phase etching enables isotropic silicon release without stiction. Thin-film deposition covers structural, sacrificial, and functional layers, and full packaging services — dicing, wire bonding, and PCB prototyping — support test-ready assembly. 

Relevant capabilities

DRIE (Bosch process) · XeF2 vapor-phase release · PVD/CVD/ALD · Optical lithography · Profilometry & AFM · Dicing, wire bonding & PCB prototyping

Chemical, physical, optical, and magnetic sensors all require precise thin-film integration and patterning at micron-to-nanometer scales. QuantaFab supports functional film deposition (oxides, nitrides, metals, piezoelectrics), fine-pitch patterning via e-beam and optical lithography, and a full metrology suite for dimensional and functional verification. Electrical characterization covers DC through RF, with temperature-controlled probe stations for environmental and thermal sensitivity testing.

Relevant capabilities

PVD/CVD/ALD · E-beam & optical lithography · ICP RIE · Profilometry & AFM · Electrical probe stations (DC to 40 GHz) · SEM metrology

Biomedical microdevices — neural probes, lab-on-chip systems, microfluidic interfaces, and implantable sensors — require biocompatible materials, precise microfabrication, and flexible substrate compatibility. QuantaFab supports parylene CVD for biocompatible encapsulation, flexible-substrate-compatible PVD and sputtering for electrode deposition, and SCS parylene CVD for conformal coating. Nano-imprint lithography and optical lithography support microfluidic channel patterning, and the Nanoscribe Photonic Professional GT2 enables complex 3D microstructures.

Relevant capabilities

Parylene CVD · Flexible-substrate PVD & sputtering · Optical & nano-imprint lithography · Nanoscribe 3D printing · ICP RIE · Dicing & wire bonding

Custom analog IC prototyping demands gate dielectric precision, reliable contact metallization, and accurate electrical verification. QuantaFab supports gate oxide and dielectric formation via thermal oxidation and ALD, metal contact and interconnect deposition via e-beam evaporation and sputtering, and patterning via optical lithography for micron-scale features or e-beam for sub-100 nm geometries. Semiconductor parameter analyzers (Keysight B1500A, Keithley 4200A) provide high-resolution I-V and multi-frequency C-V characterization.

Relevant capabilities

Thermal oxidation & ALD · E-beam evaporation & sputtering · Optical & e-beam lithography · ICP RIE · Semiconductor parameter analyzers (I-V, C-V) · Probe stations (DC to 40 GHz)

Wide-bandgap power devices in SiC and GaN require robust etch chemistry, high-temperature processing, and demanding electrical verification. QuantaFab supports SiC and GaN patterning via ICP RIE with SF6 and chlorine-based chemistries, gate dielectric deposition via ALD, and GaN epitaxy via MBE. High-temperature annealing and oxidation furnaces support dopant activation and interface passivation. The MicroXact CPS-50-HT probe station characterizes devices up to 900 °C, and the high-current curve tracer handles breakdown and power device I-V testing up to 2 kV / 100 A.

Relevant capabilities

ICP RIE (SiC, GaN) · GaN MBE · ALD · Thermal oxidation & annealing · High-temperature probe station (to 900 °C) · High-current curve tracer (2 kV / 100 A)

III-V compound semiconductor devices — HEMTs, HBTs, LEDs, laser diodes, and photovoltaics — require precise etch chemistry, ohmic and Schottky contact metallization, and passivation. QuantaFab's Panasonic E620 and Plasma-Therm Apex SLR ICP RIE systems support Cl2, BCl3, and fluorine-based chemistries for GaAs, InP, GaN, and related materials. Metal contacts are deposited via e-beam evaporation or sputtering from a broad source library, with ALD for gate dielectric and surface passivation. RF electrical characterization spans DC to 40 GHz across a wide temperature range.

Relevant capabilities

ICP RIE (Cl2, BCl3, fluorine) · E-beam evaporation & sputtering · ALD · GaN MBE · E-beam & optical lithography · RF probe stations (DC to 40 GHz) · SEM & TEM

Graphene, MoS2, hBN, and other 2D materials demand gentle patterning, ultra-thin dielectric integration, and nanoscale characterization. The Raith e-Line e-beam system is specifically well-suited for patterning on graphene, nanowires, and carbon nanotubes. ALD enables angstrom-level gate dielectric deposition without damaging the 2D layer. The Omicron surface analysis cluster supports in-situ UHV synthesis and characterization (XPS, LEED, STM/AFM, HREELS) without air exposure. Raman microscopy (DXR3xi) and AFM provide non-destructive layer and quality verification.

Relevant capabilities

Raith e-Line EBL · ALD · Omicron UHV cluster (XPS, LEED, STM/AFM, HREELS) · Raman spectroscopy · AFM · CCP & ICP RIE

Quantum device fabrication requires sub-10 nm patterning precision, ultra-conformal dielectric layers, and cryogenic characterization down to the millikelvin range. QuantaFab's JEOL JBX-8100FS (7 nm resolution) and Raith e-Line (18 nm) e-beam systems handle Josephson junction patterning, nanowire electrodes, and qubit geometries. ALD provides angstrom-level tunnel barrier and gate dielectric control. Device testing is supported by the Oxford Triton dilution refrigerator (10 mK, 12 T) and LakeShore cryogenic probe stations (4.5 K, DC to 40 GHz).

Relevant capabilities

E-beam lithography (7 nm) · ALD · PVD metal deposition · ICP RIE · Oxford Triton dilution refrigerator (10 mK, 12 T) · LakeShore cryogenic probe stations · Quantum Design PPMS (1.8 K, 9 T)

Sub-wavelength photonic structures require nanoscale lithography and etch precision. The JEOL JBX-8100FS e-beam system resolves features down to 7 nm, enabling grating couplers, waveguides, ring resonators, and photonic crystal structures. Optical films and dielectric stacks are supported through PVD, PECVD, and ALD, with film properties verified via spectroscopic ellipsometry (200–3000 nm), Raman microscopy, and PerkinElmer Lambda 950 spectrophotometry. The Neaspec IR-Neascope enables near-field optical characterization (TERS, NSOM) at the nanoscale.

Relevant capabilities

E-beam lithography (7 nm) · ICP RIE · PVD/PECVD/ALD · Spectroscopic ellipsometry · Raman spectroscopy · UV-VIS-NIR spectrophotometry · Neaspec near-field optics · SEM metrology

QuantaFab's magnetic deposition and characterization suite is among the strongest available at a university facility. Magnetic thin films — CoFeB, CoCrPt, CoFe, NiFe, MgO, Ru, and Ta — are deposited via dedicated 4-target and 6-target magnetic sputtering systems. Device patterning uses e-beam and optical lithography with AJA ion milling for magnetic metal etching. Magnetic characterization includes the Quantum Design MPMS-3 SQUID magnetometer (1.8–1000 K, ±7 T, <10⁻⁸ emu), DynaCool PPMS with VSM and broadband FMR (18 GHz), and cryogenic probe stations with up to 2.5 T in-plane field.

Relevant capabilities

Magnetic sputtering (CoFeB, MgO, NiFe, CoCrPt) · AJA ion mill · E-beam & optical lithography · SQUID magnetometry · VSM · Broadband FMR (18 GHz) · Cryogenic probe stations (2.5 T)

Not every device fits a standard category. QuantaFab specializes in custom process development for novel device architectures that don't fit the process flows of commercial foundries. Starting from your design files (GDS/OAS), we develop a process runcard tailored to your materials, geometry, and performance targets, with full documentation and rapid design iteration — typically in weeks, not months. Whether you're building a first-of-its-kind device or porting a lab process to a more controlled environment, QuantaFab can develop the process with you.

Relevant capabilities

Full process development · E-beam & optical lithography · Deposition, etch & thermal · Packaging & test-ready assembly · Metrology & characterization · SOW-based engagements