ICP ion mill
CCP RIE & plasma cleaning
CCP RIE & plasma cleaning
AJA ICP argon ion mill (6", 900 W) for physical, broadband milling of oxides, metals, and polymers, including hard-to-etch materials like Au.
CCP RIE & plasma cleaning
CCP RIE & plasma cleaning
CCP RIE & plasma cleaning
March Jupiter II (6", 600 W) for capacitively-coupled reactive ion etching of silicon, oxides, nitrides, polymers, and organics using O2, Ar, and SF6 chemistries. A PIE Scientific Tergeo-Plus plasma cleaner is also available for surface descum, ashing, and pre-process surface preparation.
ICP RIE
CCP RIE & plasma cleaning
Vapor-phase etching
Panasonic E620 (6", 1250 ICP / 600 platen) and Plasma-Therm Apex SLR (6", 2000 ICP / 600 platen) for high-rate, high-aspect-ratio etching of silicon, III-V materials, oxides, Ti, Al, SiC, and SiNx, with a broad chemistry set including Cl2, BCl3, SF6, CF4, and CHF3. Plasma-Therm Versaline ICP RIE provides additional general-purpose ICP etching capacity.
Vapor-phase etching
Deep silicon etching (DRIE)
Vapor-phase etching
Xactix E1 xenon difluoride (XeF2) etcher (4") for isotropic, vapor-phase etching of Si, Mo, Ge, SiGe, and W, ideal for releasing MEMS structures without stiction.
Deep silicon etching (DRIE)
Deep silicon etching (DRIE)
Deep silicon etching (DRIE)
Plasma-Therm Versaline DSE deep silicon etcher for Bosch-process deep reactive ion etching, producing high-aspect-ratio, near-vertical trenches in silicon — ideal for MEMS structures, through-silicon vias, and other deep-etch device geometries.
Wet etching
Deep silicon etching (DRIE)
Deep silicon etching (DRIE)
High-selectivity, high-throughput wet chemical etching for metals, oxides, and silicon, using anisotropic silicon etchants (KOH, TMAH), oxide etchants (HF, BOE), and material-specific etch chemistries for Al, Au, Cr, Ti, and SiN.